PART |
Description |
Maker |
2SC5397 |
TRANSISTOR FOR LOW FREQUENCY AMPLIFY, MEDIAM FREQUENCY AMPLIFY SILICON NPN EPITAXIAL TYPE MICRO
|
Isahaya Electronics Cor...
|
2SC5384 2SC5384-10 |
For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corpora...
|
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
INA5001AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
2SC3052 |
LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
ETC[ETC] Isahaya Electronics Corporation
|
2SA1603T 2SA1603S 2SA1603 2SA1603Q 2SA1603R |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corpora... ISAHAYA[Isahaya Electronics Corporation]
|
2SD1447 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation Panasonic Semiconductor
|
INA5002AC1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
ISA1284AS1 |
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
ISC3244AS1 |
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
2SC5482 2SC548212 |
For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro
|
Isahaya Electronics Corporation
|